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Thermally stressed high-density multi-tier copper wire bonded IC packages are the most challenging tasks in IC package decapsulation. For acid decapsulation, the hardening of epoxy in molding compound after stress tests requires much longer etching duration. As a result, copper bond wires suffer severe corrosion damage compared to un-stressed package counterparts. For plasma decapsulation, the high-density...
Semiconductor packages with 23 um copper bond wires are decapsulated by an atmospheric pressure Microwave Induced Plasma (MIP). Potential damage to the copper bond wires due to fluorine or oxygen radicals in the plasma is investigated. Parameters like CF4 amount, input power level, and O2 addition that may influence the Si3N4 passivation etching rate are evaluated. Theory behind the changes in Si...
Improvements of the Microwave Induced Plasma system especially designed for decapsulation of copper wire bonded integrated circuit (IC) packages are described. The system integrates a programmable XYZ-stage and a Charge-Coupled Device (CCD) camera allowing computer controlled process and real-time imaging on the details of the IC package during plasma etching. Parameters that affect the etching profile...
Decapsulation of plastic Integrated Circuit (IC) packages is an important step in package level failure analysis. In this paper, optimization of a Microwave Induced Plasma (MIP) system for plastic IC package decapsulation is described. An improvement on the microwave coupling of the MIP system is achieved and microwave power reflection is reduced from more than 50% to less than 15%. Results on oxygen...
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