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In this work, the high frequency (RF) performance of FinFETs is investigated in detail using a two-level parasitic model comprising outer and inner parasitic capacitances in addition to parasitic series resistances. Use of scaling relations of these parasitic capacitances with numbers of fins and fingers allows extraction of these elements. Next, by defining a series of reference surfaces, each associated...
Through this work we highlighted and demonstrated the significance of an algorithmic way of design and development of CMOS LNAs at 5 GHz. The systematic design led to very good measured performances of 14 dB gain, 1.78 dB noise figure, 10 dB return loss both at the input and output and a high linearity of-3 dBm of IP3 under 5.4 mW power consumption. These results compare the best performances reported...
A folded double-balanced mixer has been implemented in a 0.18 mum BiCMOS technology for wireless local positioning applications. Operating in the unlicensed ISM band centred at 5.8 GHz with a 150 MHz bandwidth and with a very low IF frequency band from 500 kHz up to 5 MHz, the mixer achieves 17 dB voltage conversion gain, 8.5 dB noise figure and input IP3 of - 6 dBm. The mixer power consumption is...
In this work we report on the importance of electromagnetic analysis for the layout design of monolithic 60 GHz power amplifiers (PA) in SiGe HBT technology. To facilitate this, two different layouts of the same circuit architecture were investigated. The circuits were originally designed using the circuit simulator of Agilentpsilas ADStrade and realized in a high performance 0.25 mum SiGe BiCMOS...
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