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Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. In this talk I will discuss 2 different approaches, using unique properties of nanowires, to realize light emission from Si-based compounds.
We have fabricated using advanced electron beam lithography, periodic arrays of lateral one-dimensional (1-D) and two-dimensional (2-D) bi-component exchange and magnetostatically coupled magnonic crystals (MC) consisting of alternating cobalt (Co) and Permalloy (Py) nanowires (NWs) and nanodots (NDs), lying side by side. For 1-D MCs, the width of the Co NWs is fixed at 160 nm while the width of the...
In this work, vacancies diffusion length scale or the size of the nanostructures involved during oxidation when utilizing the Kirkendall phenomenon is presented. Ni nanowires with different diameters are formed by electrodeposition of Ni into anodic aluminium oxide (AAO) membrane. The oxidation of the dispersed Ni nanowires is carried out either via rapid thermal oxidation (RTO) or conventional furnace...
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