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Source/Drain Reliability issues in a floating gate (FG) NAND string with different junction dosages are investigated. A lighter junction dosage gets better sub-threshold swing (SS) and helps the shrinkage of device channel length. However, some drawbacks, such as worse current fluctuation and abnormal self-boosting (SB), can be observed as the side effects. Charge pumping technique is applied to identify...
Floating gate (FG) devices using barrier-engineered (BE) tunneling dielectric have been studied both theoretically and experimentally. Through WKB modeling the tunneling efficiency of various multi-layer tunneling barriers can be well predicted. Experimental results for FG devices with oxide-nitride-oxide (ONO) U-shaped barrier are examined to validate our model. Furthermore, a large-density array...
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