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In this report we present recent results for MOCVD growth of high indium content InGaN films on ZnO substrates. Growth was attempted on both bulk ZnO as well as ZnO epilayers grown on sapphire by MOCVD. ZnO is an attractive alternative substrate for III-Nitrides because of its superior lattice match: specifically ZnO is perfectly matched with In0.18Ga0.82N and low cost of substrates. Stable InGaN...
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