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We report on a multi-octave (100 MHz–8 GHz), linear nonuniform distributed amplifier (NDPA) in a MMIC architecture using scaled 120-nm short-gate-length GaN HEMTs. The linear NDPAs were built with six sections in a nonuniform distributed amplifier approach, where each cell consists of main and gm3 cells. The small signal gain was >10 dB over the band, with saturated CW output power of ∼35 dBm at...
Highly scaled GaN T-gate technology offers devices with high ft/fMAX, and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA). We also report the...
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