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We demonstrated the preparation of low-voltage complementary inverters based on transistors made of ion gel-gated 2D materials. Mechanically-exfoliated ReS2 was utilized as an n-type semiconductor. The ultrahigh capacitance (6μF/cm2) and long-range polarizability of the ion gel gate dielectric layer provided low-voltage operation below 2V and allowed a coplanar-gate configuration of the transistors...
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