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We fabricated metallic Cu–Zn–Sn (CZT) precursor thin films via electrochemical deposition from aqueous metal salt solution on Mo-coated soda-lime glass substrates, and the influence of the subsequent sulfurization condition on the morphology, composition and structure of the final Cu 2 ZnSnS 4 (CZTS) thin films was investigated. A rapid thermal annealing equipment was used for a systematic...
Aluminum nitride (AlN) films were grown on Si(100) and Si(111) substrates by a low-pressure chemical vapor deposition method in the temperature range 400–800°C using two hydrazidoalane dimers, [Me2Al-μ-N(H)NMe2]2 (1) and [Et2Al-μ-N(H)NMe2]2 (2) as single-source precursors. Polycrystalline AlN films were obtained on Si(111) at 800°C from precursor 1. Amorphous AlN films were observed under certain...
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