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The promise of improved electrostatics and the ability to increase the amount of effective width (Weff) available in a given device footprint drove the semiconductor industry from planar CMOS transistors to the FinFET transistor starting at the 22 nm node [1]. Numerous manufacturers are in large-scale production of 16 and 14 nm node FinFET technologies [2-3] and there is no indication that a change...
A dopant-segregation technique for junction engineering has been demonstrated on trigate transistors using a process flow that does not include raised source/drain epitaxy. It is shown that the dopant-segregation technique reduces the off-state leakage current and improves the on-state performance for NFET devices when compared with control devices built using conventional junction engineering. The...
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