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Scandium oxide was deposited by means of high pressure sputtering in the same conditions on differently prepared (100) Si substrates: chemical oxide, nitrided Si and deposited silicon nitride. Time-of-flight secondary ion mass spectroscopy and X-ray photoemission spectroscopy show that polycrystalline Sc2O3 films were grown with a composition which is constant with depth. According to Capacitance-Voltage...
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