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Porous low-k dielectrics reliability in interconnect is a major concern for sub 45 nm technology nodes. Low-k dielectric ageing characterization during stress is becoming a key point to improve low-k interconnect robustness. In this context, the leakage and especially the capacitance shifts under electrical stress are analyzed in this paper. Four dielectric ageing mechanisms potentially responsible...
H2, O2, NH3 and CH4 in situ post-etching treatments (PET) have been investigated as a solution to prevent the residues formation (TiFx based) on TiN metallic hard mask (MHM) after etching in fluorocarbon based plasmas. The PET impact on the residues growth reduction on the mask and on the porous SiOCH modification is presented and discussed. The compatibility of the different PET is also evaluated...
The introduction of SiOCH low-k dielectrics in copper interconnects associated to the reduction of the critical dimensions in advanced technology nodes is becoming a major reliability concern. The interconnect realization requires a consequent number of critical process steps [1]. Since porous low-k dielectrics are used as Inter-Metal Dielectric (IMD) each process step can be a source of degradation...
SiOCH low-k dielectrics introduction in copper interconnects associated to the critical dimensions reduction in sub 45 nm technology nodes is a challenge for reliability engineers. Circuit wear-out linked to low-k dielectric breakdown is now becoming a major concern. With the reduction of the line to line spacing, the control of the copper line topology is becoming a first order parameter governing...
SiOCH low-k dielectrics introduction in copper interconnects associated to the critical dimensions reduction in sub-45-nm node technologies is a challenge for reliability engineers. Circuit wear-out linked to low-k dielectric breakdown is now becoming a major concern. With line-to-line spacing reduction, the control of the line shape and of the spacing uniformity within a wafer is becoming first-order...
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