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Radiation‐induced defects are a common tool in the manufacturing of modern power semiconductor devices. Hydrogen‐related doping is a feasible method to introduce deep doping profiles with a low thermal budget. The hydrogen‐related donors (HDs) require radiation damage and hydrogen, which can be induced by different methods, e.g., proton implantation, helium and proton co‐implantation, or an implantation...
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