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The structure and residual stresses of TiN films deposited by arc ion plating (AIP) on a steel substrate were investigated using a synchrotron radiation system that emits ultra-intense X-rays. In a previous study, the crystal structures of TiN films deposited by AIP were found to be strongly influenced by the bias voltage. When high bias voltages were used, TiN films that were approximately 200nm...
A break of wiring by stress-migration becomes a problem with an integrated circuit such as LSI. The present study investigates residual stress in SiO 2 /Cu/TiN film deposited on glass substrates. A TiN layer, as an undercoat, was first deposited on the substrate by arc ion plating and then Cu and SiO 2 layers were deposited by plasma coating. The crystal structure and the residual...
Internal stresses in thin copper films with or without passivation were investigated by the diffraction method using an in-lab X-ray apparatus and a synchrotron radiation system. The in-lab X-ray stress equipment primarily measures the stresses m films thicker than 100 nm, whereas the synchrotron radiation system can measure stresses in films as thin as 8 nm. The residual stresses in the copper films...
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