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The structure of the wurtzite-derived β-AgGaO2 was refined by Rietveld analysis of high-resolution powder diffraction data obtained using synchrotron X-ray radiation. The space group of the crystal is Pna21 with lattice parameters of a0=5.56175Å, b0=7.14749Å, and c0=5.46875Å. The deviation of O–Ag–O and M–O–M bond angles from the regular tetrahedral angle of 109.5° was very large at ~8° and ~11°,...
The structure and residual stresses of TiN films deposited by arc ion plating (AIP) on a steel substrate were investigated using a synchrotron radiation system that emits ultra-intense X-rays. In a previous study, the crystal structures of TiN films deposited by AIP were found to be strongly influenced by the bias voltage. When high bias voltages were used, TiN films that were approximately 200nm...
A break of wiring by stress-migration becomes a problem with an integrated circuit such as LSI. The present study investigates residual stress in SiO 2 /Cu/TiN film deposited on glass substrates. A TiN layer, as an undercoat, was first deposited on the substrate by arc ion plating and then Cu and SiO 2 layers were deposited by plasma coating. The crystal structure and the residual...
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