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The spectral response and responsivity of a GeSn photoconductor were measured from 300 to 77 K. The maximum responsivity of 0.06 A/W was measured at 1550 nm for 10 volts bias at 140 K.
GeSn films were annealed in cycles of 30 s at 450 and 500 C. The annealing temperature and number of cycles for material quality enhancement and relaxation depends upon Sn mole fraction and film thickness.
Multi-junction solar cell efficiency gains due to GeSn and SiGeSn have already shown that a need exists for significant advancement in growing this material in a commercially available CVD chamber. Ge1−xSnx films have been grown via an Epsilon RPCVD single wafer CVD deposition tool on Si using a relaxed Ge buffer layer. The material and optical properties of these films have been characterized for...
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