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GaN films were deposited on Si (400) wafers by a pulsed laser deposition technique, and it was shown that out-of-plane texture of the film is controllable although the film and the substrate do not have any interface epitaxy. The texture of the film can be set either in c-axis or a-axis direction, thereby achieving polar or nonpolar film surfaces as desired. The GaN film and Si substrate were found...
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