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We extend ambipolar silicon nanowire transistors by using three independent gates and show an efficient approach to implement dual-threshold-voltage configurable circuits. Polarity and threshold voltage of uncommitted devices are determined by applying different bias patterns to the three gates. Uncommitted logic gates can thus be configured to implement different logic functions for dual-threshold-voltage...
This brief presents a novel power-gating technique for differential cascade voltage switch logic (DCVSL) based on double-gate (DG) controllable-polarity field-effect transistors (FETs). DG controllable-polarity FETs, commonly referred to as ambipolar transistors, are devices whose polarity is online reconfigurable by changing the second gate bias. In this brief, we exploit the online control of ambipolar...
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