The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A Ku-band MMIC of power amplifier has been designed in the standard 0.2 μm AlGaAs/InGaAs/GaAs PHEMT process of OMMIC. The monolithically integrated single-ended 3-stage power amplifier is biased at class A state. The resistors have been added in series or in parallel with the gate of the PHEMT for each stage to improve the stability. Under a single supply voltage of +3.5V, simulations prove that the...
A monolithic integrated linear power amplifier (PA) for 5GHz WLAN application has been realized in 0.35mum-SiGe BiCMOS technology. The single-ended 3-stage power amplifier uses on-chip inductors and bond-wire inductance for input and interstage matching. Under a single supply voltage of +3.3V, the SiGe HBT MMIC power amplifier exhibits linear output power of 26.4dBm (P1dB), small signal gain of 24...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.