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The research on internally-formed pillar-shaped temperature field must be do, in order to solve the structure design and work mode design problems of the hot metal temperature sensor for the blast furnace. But the massive manpower and material resources would be consumed if the experimental method is utilized purely. Heat-conducting analysis model is established on pillar-shaped cavity by applying...
In this paper, a SiGe BiCMOS power amplifier has been designed, showing the competitive performance compared to GaAs HBT. The 2.4 GHz power amplifier realized in IBM 0.35 mum SiGe BiCMOS technology. As shown in Fig.5, under high power mode, the measured gain is 24 dB and the input return loss Sn is better than -15 dB, the output return loss S22 is ~9.6 dB at 2.45 GHz. The PA exhibits PidB of 24.1...
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