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In this paper, a SiGe BiCMOS power amplifier has been designed, showing the competitive performance compared to GaAs HBT. The 2.4 GHz power amplifier realized in IBM 0.35 mum SiGe BiCMOS technology. As shown in Fig.5, under high power mode, the measured gain is 24 dB and the input return loss Sn is better than -15 dB, the output return loss S22 is ~9.6 dB at 2.45 GHz. The PA exhibits PidB of 24.1...
A Ku-band MMIC of power amplifier has been designed in the standard 0.2 μm AlGaAs/InGaAs/GaAs PHEMT process of OMMIC. The monolithically integrated single-ended 3-stage power amplifier is biased at class A state. The resistors have been added in series or in parallel with the gate of the PHEMT for each stage to improve the stability. Under a single supply voltage of +3.5V, simulations prove that the...
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