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In this paper, a SiGe BiCMOS power amplifier has been designed, showing the competitive performance compared to GaAs HBT. The 2.4 GHz power amplifier realized in IBM 0.35 mum SiGe BiCMOS technology. As shown in Fig.5, under high power mode, the measured gain is 24 dB and the input return loss Sn is better than -15 dB, the output return loss S22 is ~9.6 dB at 2.45 GHz. The PA exhibits PidB of 24.1...
A two-stage class-A medium power amplifier operated at 1.95 GHz is designed and fabricated in Jazz SiGe BiCMOS 0.35-mum technology. The circuit is fully integrated excluding the bias inductances and the output matching network. The simulated results indicate that the power amplifier can deliver a power of more than 141 mW (21.5 dBm) with a PAE of 24% under 3.3 V supply voltage. The IMD2 and IMD3 are...
A monolithic integrated linear power amplifier (PA) for 5GHz WLAN application has been realized in 0.35mum-SiGe BiCMOS technology. The single-ended 3-stage power amplifier uses on-chip inductors and bond-wire inductance for input and interstage matching. Under a single supply voltage of +3.3V, the SiGe HBT MMIC power amplifier exhibits linear output power of 26.4dBm (P1dB), small signal gain of 24...
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