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Resistive switching memory (RRAM) devices are gaining momentum as next generation memory technology for high density and embedded storage. To support technology development by the industry, the scaling and reliability of 1 kb RRAM must be understood and predicted. This work addresses data retention of resistance states in RRAM arrays based on HfO2. We develop a new method for studying retention statistics...
This work proposes process/resistance variation-insensitive read schemes for embedded RRAM to achieve fast read speeds with high yields. An embedded mega-bit scale (4Mb), single-level-cell (SLC) RRAM macro with sub-8ns read-write random access time is presented. Multi-level-cell (MLC) operation with 160ns write-verify operation is demonstrated.
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