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A 3-nm-thick Al 2 O 3 based resistive memory with a Ti layer was prepared in this work. The Ti/HfO x devices with the same thickness were also fabricated for comparison. The oxygen gettering of Ti form Al 2 O 3 is lower than that from HfO x . The Al 2 O 3 devices with strong dielectric strength exhibit tight distribution of initial resistance...
In this work, the nanoscale Ti/HfO2 based resistive memory with pillar structure was fabricated. The architecture of the pillar device shows the advantages of reduced parasitic capacitance effect and simple process flow. The effects of the passivated layer on the nanoscale RRAM are also studied. Reduction of the interaction between the memory device and the encapsulating layer plays an important role...
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