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In this paper, we first review the theoretical model and numerical algorithm for the simulation study of the surface plasmon (SP) coupling with a radiating dipole in an InGaN/GaN quantum well to demonstrate the advantages of SP-coupled light-emitting diode (LED) in the visible range, including internal quantum efficiency enhancement, droop effect reduction, and modulation bandwidth increase. Then,...
The radiated power enhancement (suppression) of a c-plane (c-axis) oriented radiating dipole at a given emission wavelength in the quantum well of a c-plane, deep-UV light-emitting diode (LED) when it is coupled with a surface plasmon (SP) resonance mode induced on a nearby Al nanoparticle (NP) is demonstrated. Also, the enhanced radiated power mainly propagates in the direction from the Al NP toward...
The InGaN/sapphire-based photovoltaic (PV) cells with Al0.14Ga0.86N/In0.21Ga0.79N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the short-circuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm2, 2.18 V, and 0.65, respectively, corresponding...
Absorption enhancement of an amorphous Si solar cell is numerically demonstrated by placing metal nanoparticles on the device top, including periodical and non-periodical distributions, to induce localized surface plasmon for effectively generating forward scattering.
Numerical simulations of an InGaN-based solar cell with embedded Ag nanoparticles in the absorption layer show significant efficiency increase through surface plasmon induced absorption enhancement. Carrier transport blocking by the embedded nanoparticles affects little the efficiency. An increase of 19% in maximum output power density is demonstrated.
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