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Direct epitaxy of high-quality perovskite oxides on silicon paves the way for their integration with Si microelectronics. At Motorola Labs, we have achieved heteroepitaxy of high-quality perovskite oxide films and stacks on up to 8-in. Si and silicon-on-insulator (SOI) substrates by using molecular beam epitaxy. Alkaline earth metals are used to remove the native oxide on Si and SOI at 720-800 ...
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