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Back-via three-dimensional (3D) integration using multiple thin-wafer transfer processes has been developed at GINTI, Tohoku University, where visible laser was employed for wafer debonding. The potential advantages of laser debonding are (i) the realization of ultra-thin wafer releasing with less stress as compared to the conventional thermal and chemical debonding methods, and (ii) no adhesive residues...
We develop new via-last backside-via 3D integration technologies using a unique temporary adhesive system in which visible-light laser is employed for wafer debonding from glass carriers. The advanced 3D and TSV researches are driven in order to fabricate Si interposers with high-density TSVs and highly integrated 3D hetero chips at Global INTegration Initiative (GINTI) as a new system integration...
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