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Abstract - Thermal conductivity of the substrate affects the performance of high power RF devices. It is a dominant limiting factor in current state-of- the-art GaN HEMTs on SiC substrate. Due to high thermal conductivity, diamond substrate is an attractive alternative for GaN HEMTs. We have developed device quality GaN-on-diamond wafers using CVD diamond and fabricated 0.25 µm gate length HEMTs....
Small antennas usually lack of some problems such as their associated bandwidth and efficiency. Metamaterial particles have been used as a means to achieve small antennas. However all the designed antennas with metamaterial particles suffer from the previous drawbacks. The use of the so called active metamaterial particles tries to overcome the previous problems. Negative impedance converters can...
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