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Effects of Cu ions implantation on the structure and electron field emission (EFE) properties of microcrystalline diamond (MCD) films were investigated. The MCD films implanted with Cu ions at a fluence of 1.0 × 1017 ions/cm2 and subsequent annealing in N2 atmosphere at 600 °C for 2 h achieved good electrical conductivity with lower surface resistance of 0.1301 Ω/sq, high carrier concentration of...
An optical-grade, free-standing diamond (FSD) film is prepared by home-made microwave plasma chemical vapor deposition reactor at a condition of input power 8 kW and gas pressure18 kPa. Then, it is implanted with 80 keV Ag ions up to a fluence of 5.0 × 1016 ions/cm2. After implantation, a subsequent annealing in Ar ambient at 500 °C is carried out to fabricate Ag nanoparticles (NPs). Grazing incidence...
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