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This paper proposes a novel 150-GHz single-pole-double-throw (SPDT) switch based on a rat-race coupler topology. It is designed with a 0.13-μm SiGe BiCMOS and occupies a chip area of 507 μm×542 μm. The switch achieves insertion loss of 4.0 dB/3.3 dB, isolation of 36.3 dB/35.9 dB, input return loss of 18.7 dB/12.3 dB, output return loss of 21.7 dB/26.1 dB and power-handling capabilities of 22.2 dBm/15...
This paper presents a fully integrated 166-GHz frequency synthesizer (FS) in 0.13-μm SiGe BiCMOS technology. The proposed FS consists of a 20-GHz phase-locked loop (PLL) and a frequency multiplier including a doubler (×2) and a quadrupler (×4). The FS generates the D-band output signals from 164.08 to 166.19 GHz. At 166.19 GHz, the measured phase noises at 100-kHz and 1-MHz offset frequencies are...
This paper presents a fully integrated 166-GHz frequency synthesizer (FS) in 0.13-μm SiGe BiCMOS technology. The proposed FS consists of a 20-GHz phase-locked loop (PLL) and a frequency multiplier including a doubler (×2) and a quadrupler (×4). The FS generates the D-band output signals from 164.08 to 166.19 GHz. At 166.19 GHz, the measured phase noises at 100-kHz and 1-MHz offset frequencies are...
A microstrip grid array antenna consisting of 32 meshes is designed on Ferro A6M LTCC substrate of 0.19 mm thickness with 5.9 dielectric constant and 0.002 loss tangent. The antenna is designed to operate at 94 GHz with the mesh dimension of 0.81mm by 1.62mm. Simulation results in Ansoft HFSS show an impedance bandwidth of 8 GHz from 87 GHz–95 GHz and 17.3 dBi gain at 94 GHz. A main beam in the broadside...
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