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High‐mobility semiconducting polymers for thin film transistors are reported by T. Michinobu and co‐workers on page 1604608. The polymers contain strong electronaccepting thiadiazolobenzotriazole units, highly planar vinylene spacers, heteroatom‐substituted aromatic rings, and solubilizing alkyl groups. They show p‐type transistor behavior with a remarkably high hole mobility of 3.22 cm2 V−1 s−1 as...
High‐mobility semiconducting polymers composed of arylene vinylene and dithiophene‐thiadiazolobenzotriazole (SN) units are developed by three powerful design strategies, namely, backbone engineering, heteroatom substitution, and side‐chain engineering. First, starting from the quaterthiophene‐SN copolymer, a vinylene spacer is inserted into the quaterthiophene unit for constructing highly‐planar backbones...
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