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Cadmium sulfide and zinc sulfide films were grown on (100)GaAs substrate by successive ionic layer adsorption and reaction (SILAR) technique from aqueous precursor solutions at room temperature and normal pressure. The stress development of the thin films was characterized by laser interferometry as a function of the thickness of the films. The morphology and roughness of the films were monitored...
Cadmium sulfide thin films were grown on GaAs (100) by the successive ionic layer adsorption and reaction (SILAR) technique from aqueous precursor solutions. The purpose of this work was to analyze and find stress dependence of CdS thin films thickness and growth mode. The stress of the thin films was characterized by means of laser interferometry, composition and morphology by electron spectroscopy...
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