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ZrO2 films were grown by atomic layer deposition using ZrCl4 and O3 as precursors. The films were grown on silicon substrates in the temperature range of 220–500°C. The ALD rate was monotonously decreasing from 0.085 to 0.060nm/cycle in this temperature range towards the highest temperatures studied. The content of chlorine in the films did not exceed 0.2at.% as measured by elastic recoil detection...
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