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Zirconium doped indium oxide thin films were deposited by the atomic layer deposition technique at 500 o C using InCl 3 , ZrCl 4 and water as precursors. The films were characterised by X-ray diffraction, energy dispersive X-ray analysis and by optical and electrical measurements. The films had polycrystalline In 2 O 3 structure. High transparency and resistivity...
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