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Al2O3 thin films were grown by atomic layer deposition to thicknesses ranging from 10 to 90nm on flexible steel substrates at 300°C using Al(CH3)3 and H2O as precursors. The films grown to thicknesses 9–90nm covered the rough steel surfaces uniformly, allowing reliable evaluation of their dielectric permittivity and electrical current densities with appreciable contact yield. Mechanical behavior of...
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