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A precision‐growth capability enabled by advanced pulsed‐laser epitaxy can deliberately design oxide superlattices at the atomic scale. On page 6701, W. S. Choi, H. Ohta, and H. N. Lee demonstrate that a fractional δ‐doping in 2D oxide superlattices with precisely controlled interface compositions can improve the thermopower of oxide thermoelectrics by 300% compared with that of bulk counterparts...
Precise tuning of the 2D carrier density by using fractional δ‐doping of d electrons improves the thermoelectric properties of oxide heterostructures. This promising result can be attributed to the anisotropic band structure in the 2D system, indicating that δ‐doped oxide superlattices are good candidates for advanced thermoelectrics.
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