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A two-step annealing method with a low thermal budget is proposed for advanced surface-energy-driven secondary grain growth of Ge films without any agglomeration. In the first-step annealing, the normal grain growth from as-deposited poly-crystalline Ge films was induced to make the grain size equivalent to the film thickness at 800°C. After the subsequent second-step annealing at 900°C, the much...
We investigated the effects of low temperature (LT) Ge buffer layers on the two-step Ge growth by varying the thickness of buffer layers. Whereas the two-step Ge layers using thin (<40nm) Ge buffer layers were roughened due to the formation of SiGe alloy, pure and flat Ge layers were grown by using thick (>50nm) LT Ge buffer layers. The lowest threading dislocation density of 1.2×10 6 ...
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