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To achieve low write current in high density Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) arrays, it is important to understand and co-optimize the different kinds of device switching currents, governed by different materials parameters. We demonstrate that double magnetic tunnel junctions (DMTJs) lower the switching current threshold Ic0 by a factor of two when compared to conventional...
We report switching performance of perpendicularly magnetized Spin-Transfer Torque MRAM (STT-MRAM) devices with double tunnel barriers and two reference layers. We show that stacks with double tunnel barriers improve the switching efficiency (Eb/Ic0) by 2x, when compared to similar stacks with a single tunnel barrier. Switching efficiency up to 10 kBT/uA was observed in single devices. A large operating...
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