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We demonstrate dramatic breakdown behavior in the current through GaAs/AlGaAs nanoconstrictions (NCs), and find that this exhibits multiple signatures characteristic of the Gunn effect. These include current fluctuations and hysteresis, and electroluminescence that are consistent with the formation of Gunn domains. An analytical model is developed to describe the current–voltage characteristics of...
We study impact-ionization-induced electroluminescence (EL) from a GaAs/AlGaAs heterostructure under high bias. In addition to k-space transfer (the Gunn effect), EL spectra indicate real-space (GaAs-to-AlGaAs) transfer. Microscopy shows strong EL near the anode.
This paper gives a detailed analysis and discussion of the flow field inside the type of D125 MOCVD reactor chamber through the analysis of three-dimensional mathematical model and calculation. Under a wide range of geometric and process parameters, such as varying total flow rate of gas inlet, chamber pressure, growth temperature, and wafer carrier rotation. It is finally obtained the favorable conditions...
The substrate angle and impurity flow restrictions on doping concentration of P-type AlGaInP cladding layer have been studied by using ECV( Electrochemical Capacitance Voltage) measurement. The experimental results show that the angle of 15° to the substrate than 2° is easier to achieve high doping concentration with Mg impurity at the same condition, furthermore, the doping concentration increase...
A systematic computational fluid dynamic (CFD) study was performed to investigate the effects of operating parameters of chamber pressure and wafer carrier rotation rate on the GaAs/AlGaAs deposition rate and uniformity in vertical rotating disc metal organic chemical vapor deposition (MOCVD) reactors. It is shown that significant improvement of the reactors efficiency can be achieved by finding the...
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