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A 58-GHz (V-band) CMOS direct injection-locked frequency-divider (DILFD) using input-power-matching technique for locking-range enhancement is reported for the first time. In an input-power-matching technique, an inductive input-matching-network is added to the gate of the NMOS switch to optimize the input-power-matching, i.e. to maximize the internal power, over the frequency band of interest. This...
A low-power and wide-locking-range 55.8-GHz (V-band) injection-locked frequency-divider (ILFD) using standard 0.13 mum CMOS technology is reported. To enhance locking range, a shunt inductor was introduced in the source node of the cross-coupled pair to maximize the equivalent load impedance of the tail transistor, i.e. to maximize the internal power, over the frequency band of interest. In addition,...
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