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Flexible electric-double-layer (EDL) InGaZnO thin-film transistors (TFTs) were fabricated on a plastic substrate at room temperature. A large EDL gate capacitance, 0.22 $\mu \text{F}$ /cm2, at 20 Hz was achieved using 200-nm-thick radio frequency magnetron sputtered porous SiO2 as the dielectric layer, which is equivalent to ~15.7-nm thermally grown SiO2. The devices, therefore, show a low operating...
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