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A low-power and high power-gain ($S_{21}$ ) ultrawideband low noise amplifier (UWB LNA) with flat noise figure (NF) based on Global Foundies 0.13-$\mu \text{m}$ CMOS technology is reported. The load effect of common-gate (CG) topology is applied with dual-resonance load network for both wideband input matching and NF flatness. Combined with inductive-series peaking technique, the frequency response...
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