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We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. Except the enhanced sub-GaAs bandgap current collection (∼0.16mA/cm2) from 900nm and beyond, we confirmed significant current collection enhancement (∼0.91mA/cm2) in ELO-InAs QD cell within the wavelength range of 700nm∼900nm. We also confirmed the...
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