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The effects of aluminum (Al-) doping in SiO 2 film containing silicon-nanocrystal (nc-Si) dots were investigated by photoluminescence (PL) and electron spin resonance (ESR) measurements. The observed PL peak center showed a blueshift due to reduction of size of nc-Si dots as a result of the Al doping followed by annealing within a range of 600–800°C. For the samples annealed at 1000°C, the...
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