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The astonishing recent progress in the field of metal oxide thin‐film transistors (TFTs) and their debut in commercial displays is accomplished using vacuum‐processed multicomponent oxide semiconductors. However, emulating this success with their solution‐processable counterparts poses numerous scientific challenges. Here, the development of high mobility n‐channel TFTs based on ultrathin (<10...
This paper reports the controlled growth of atomically sharp In2O3/ZnO and In2O3/Li‐doped ZnO (In2O3/Li‐ZnO) heterojunctions via spin‐coating at 200 °C and assesses their application in n‐channel thin‐film transistors (TFTs). It is shown that addition of Li in ZnO leads to n‐type doping and allows for the accurate tuning of its Fermi energy. In the case of In2O3/ZnO heterojunctions, presence of the...
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