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This paper reports a novel Super Junction pLDMOS (SJ-pLDMOS) with charge-balanced SJ region at the surface of Variation Lateral Doping (VLD) drift region. SJ region provides a low on-resistance path in the ON-state and keeps charge balance approximately when the doping concentration of p pillars is slightly higher than that of the n pillars during the OFF-state. A significant reduction of the specific...
Device simulations are applied to find out the effects of floating island thickness (dF) and doping concentration (Np+) in power floating island MOSFET (FLIMOS). The simulation results show that the specific on-resistance (Ronmiddotsp) increases by enlarging dF while Np+ produce little influence on Ronmiddotsp; When Np+ is low, the breakdown voltage (Vbr) improves by enlarging dF; When Np+ is high,...
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