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A lateral power MOSFET with the extended trench gate is proposed in this letter. The polysilicon gate electrode is extended to the substrate, which improves the breakdown voltage (BV) and specific on-resistance (Ron). It indicates by simulation that the Ron of 1.86mΩ.cm2 with a BV of 174V in the proposed structure is nearly 53% less than the Ron of 3.96mΩ.cm2 with a BV of 126V in the typical structure.
A new lateral power MOSFET structure [folded-accumulation LDMOS (FALDMOS)] is proposed, in which the silicon-substrate surface is trenched to form a folded shape from the channel to the drain electrode and the gate is extended to the drain. The majority-carrier accumulation layer is formed as the device is in on state due to the extended gate in the drift region whose concentration is higher than...
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