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A novel 2-mum thin-drift-layer power MOSFET with an n-type floating buried layer (FBL) in substrate is proposed in this letter. Since the charges in the buried layer modulate the bulk electric field, a nearly uniform electric field is obtained, and the vertical breakdown voltage (BV) is significantly improved. Simulation results show that the BV of the proposed FBL lateral double-diffused MOSFET (LDMOSFET)...
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