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In this paper, we investigated the dose window of forming a continuous buried oxide (BOX) layer by single implantation at the implantation energy of 200 keV. Then, an improved two-step implantation process with second implantation dose of 3×1015 cm−2 was developed to fabricate high quality separation by implanted oxygen (SIMOX) silicon on insulator (SOI) wafers. Compared with traditional single implantation,...
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