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A scalable eletrothermal model is necessary for a high‐power amplifier design for accurate accounting of thermal effects. Toward this end, this study presents a scalable large‐signal model of gallium‐nitride (GaN) high‐electron‐mobility transistors (HEMTs) on diamond substrates. First, a three‐dimensional (3D) thermal analysis model was established. Then, a modified eletrothemal expression was proposed...
An accurate analytical electrothermal drain current (Ids) model for AlGaN/GaN HEMTs is presented in this letter. The model is implemented into our recently proposed quasi‐physical zone division (QPZD) model for demonstration purpose. Compared with the original QPZD model, its electrothermal characteristics are enhanced by involving more fundamental temperature dependent elements. In addition, these...
This paper presents the temperature dependence of small signal performance of GaN‐on‐diamond high electron mobility transistors (HEMTs) at an ambient temperature range from 0°C to 125°C. The temperature influence on the parasitic resistances together with the intrinsic parameters is investigated, and the temperature coefficients of these parameters are extracted from measured data. For comparison,...
In this paper, a new millimeter‐wave gain equalizer based on metallic rectangular waveguide is presented, which is implemented by E‐plane microstrip‐line probe, metal rectangular waveguide resonator, waveguide coupling groove, and thin‐film resistor. The proposed gain equalizer has good tunability, high Q factor, and high power capacity. To demonstrate its performance, a modified gain equalizer, operating...
In this paper, a reliable and efficient parameter extraction method for GaN high electron mobility transistor (HEMT) small‐signal models has been proposed. By utilizing parameter scanning method, the initial values of the extrinsic elements are first extracted from the cold pinch‐off and cold unbiased measurement conditions, respectively. An iterative optimization algorithm is employed then to optimize...
In this paper, a scalable and multibias parameter extraction method for gallium nitride high electron mobility transistor small‐signal model has been proposed. The main advantage of this method is that the temperature‐dependent access resistances and nonlinear thermal resistance have been taken into account, which makes the extracted access resistances and intrinsic elements more physical and reliable...
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