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TiO2 thin film was deposited onto n-Si substrate at 100 °C by using a sputtering method, and the film was annealed in air atmosphere at range of 500 °C–1000 °C. The structural and morphological properties of the all films were investigated by X-ray diffraction and atomic force microscope. The gas sensor with interdigitated platinum electrodes was fabricated with photolithographic techniques using...
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